| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device is disclosed. The semiconductor comprises a field effect transistor (FET) provided in a substrate, the FET including a plurality of gates, sources, and drains each extending in parallel along a longitudinal direction of the gates, the sources, and the drains; an upper electrode provided above the substrate with an insulating layer therebetween, the upper electrode having an opening where the FET is disposed, and a plurality of source extractions each connected to respective sources through via structures passing the insulating layer and to the upper electrode, the source extractions extending along the longitudinal direction. |
| 申请公布号 |
US2015349070(A1) |
申请公布日期 |
2015.12.03 |
| 申请号 |
US201514724598 |
申请日期 |
2015.05.28 |
| 申请人 |
Sumitomo Electric Industries, Ltd. |
发明人 |
KAWASAKI Takeshi |
| 分类号 |
H01L29/417;H01L29/78;H01L23/50;H01L27/088;H01L27/095;H01L29/06;H01L29/423;H01L29/812 |
主分类号 |
H01L29/417 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a field effect transistor (FET) provided in a substrate, the FET including a plurality of gates, sources, and drains each extending in parallel along a longitudinal direction of the gates, the sources, and the drains; an upper electrode provided above the substrate with an insulating layer therebetween, the upper electrode having an opening where the FET is disposed; and a plurality of source extractions each connected to respective sources through via structures passing the insulating layer and to the upper electrode, the source extractions extending along the longitudinal direction. |
| 地址 |
Osaka-shi JP |
