METHOD FOR THE FORMATION OF A FINFET DEVICE HAVING PARTIALLY DIELECTRIC ISOLATED FIN STRUCTURE

摘要

A semiconductor material is patterned to define elongated fins insulated from an underlying substrate. A polysilicon semiconductor material is deposited over and in between the elongated fins, and is patterned to define elongated gates extending to perpendicularly cross over the elongated fins at a transistor channel. Sidewall spacers are formed on side walls of the elongated gates. Portions of the elongated fins located between the elongated gates are removed, along with the underlying insulation, to expose the underlying substrate. One or more semiconductor material layers are then epitaxially grown from the underlying substrate at locations between the elongated gates. The one or more semiconductor material layers may include an undoped epi-layer and an overlying doped epi-layer. The epitaxial material defines a source or drain of the transistor.

主权项

1. A method, comprising:
patterning a first semiconductor material to form a plurality of elongated fins that are isolated from an underlying substrate material by an insulating layer; depositing a second semiconductor material over and in between the plurality of elongated fins; patterning the second semiconductor material to form a plurality of elongated gates extending to cross over the plurality of elongated fins; forming sidewall spacers on side walls of the elongated gates; removing the first semiconductor material of the elongated fins located between, but not under, the elongated gates; and epitaxially growing additional semiconductor material between the elongated gates.