发明名称 |
THIN FILM INTERCONNECTS WITH LARGE GRAINS |
摘要 |
The present disclosure relates to integrated circuits and to methods of manufacturing interconnects of integrated circuits. For example, an integrated circuit includes a surface of the integrated circuit and an interconnect formed on the surface and comprising a metal. An average grain size of the metal of the interconnect is greater than or equal to at least half of a line width of the interconnect. In another example, a method for manufacturing an interconnect of an integrated circuit includes depositing a layer of a metal onto a surface of the integrated circuit, annealing the metal, patterning a first hard mask for placement over the metal and forming a line of the interconnect and a first via of the interconnect by performing a timed etch of the metal using the first hard mask. |
申请公布号 |
US2015348832(A1) |
申请公布日期 |
2015.12.03 |
申请号 |
US201414289422 |
申请日期 |
2014.05.28 |
申请人 |
International Business Machines Corporation |
发明人 |
Bruce Robert L.;Cabral, JR. Cyril;Fritz Gregory M.;Joseph Eric A.;Lofaro Michael F.;Miyazoe Hiroyuki;Rodbell Kenneth P.;Shahidi Ghavam G. |
分类号 |
H01L21/768;H01L23/532;H01L23/522 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
1. An integrated circuit, comprising:
a surface of the integrated circuit; and an interconnect formed on the surface and comprising a metal, wherein an average grain size of the metal of the interconnect is greater than or equal to at least half of a line width of the interconnect. |
地址 |
Armonk NY US |