| 发明名称 |
SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
| 摘要 |
Provided is a semiconductor device manufacturing method that includes joining a support substrate to a back side of a semiconductor wafer across a ceramic adhesive layer and a mask, to form a joined body. The method further includes forming a functional structure on a front side of the semiconductor wafer. The method further includes detaching the support substrate from the semiconductor wafer by removing the ceramic adhesive layer and the mask. The method further includes a back side processing step of carrying out back side processing on the back side of the semiconductor wafer. |
| 申请公布号 |
US2015348818(A1) |
申请公布日期 |
2015.12.03 |
| 申请号 |
US201514821496 |
申请日期 |
2015.08.07 |
| 申请人 |
FUJI ELECTRIC CO., LTD. |
发明人 |
TACHIOKA Masaaki;NAKAJIMA Tsunehiro |
| 分类号 |
H01L21/683;B32B9/04;B32B38/10;B32B7/12;B32B37/14;B32B37/18 |
主分类号 |
H01L21/683 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device manufacturing method, including:
a back side joining step of joining a support substrate to a back side of a semiconductor wafer across a ceramic adhesive layer and a mask to form a joined body; a functional structure formation step of forming a functional structure on a front side of the semiconductor wafer; a detachment step of detaching the support substrate from the semiconductor wafer by removing the ceramic adhesive layer and the mask; and a back side processing step of carrying out back side processing on the back side of the semiconductor wafer. |
| 地址 |
Kawasaki-shi JP |
