| 摘要 |
An array substrate, a manufacturing method therefor, a display device, a thin film transistor and a manufacturing method therefor. The manufacturing method for the thin film transistor comprises: a pattern comprising an active layer (203) is formed on a base substrate (201), and a gate insulating layer (205) having a metal thin film (219) is formed on the pattern; the metal thin film (219) is patterned via a one-time patterning process, forming a pattern comprising a gate (206), a source (207), a drain (208), a gate line (223) and a data line (221); a passivation layer (209) is formed on the base substrate (201); the passivation layer (209) is patterned via a one-time patterning process, forming a source contact hole (210), a drain contact hole (211) and a cross-bridge structure contact hole (222a); a transparent conductive thin film (212) is formed on the base substrate (201), and a portion of the transparent conductive thin film (212) is removed so as to form a source contact portion (213), a drain contact portion (214), a pixel electrode (215) and a cross-bridge structure (222). The manufacturing method reduces the number of times a patterning process is used. |
