发明名称 METHOD FOR PRODUCING GROUP-III NITRIDE SUBSTRATE
摘要 This method for producing a group-III nitride substrate has: a step of preparing a plurality of seed crystal substrates that are formed in a shape whereby said substrates are lined up and the side surfaces face each other; a step of adhering the seed crystal substrates to a base material using an adhesive such that the substrates are lined up and the side surfaces face each other; a step of growing group-III nitride crystals above the main surfaces of the seed crystal substrates such that the crystals which have grown above the main surfaces bond with each other and become unified; and a step of obtaining a group-III nitride substrate formed by the group-III nitride crystals.
申请公布号 WO2015182520(A1) 申请公布日期 2015.12.03
申请号 WO2015JP64771 申请日期 2015.05.22
申请人 SCIOCS COMPANY LIMITED 发明人 YOSHIDA TAKEHIRO
分类号 C30B29/38;B23K26/364;C23C16/01;C23C16/34;C30B25/20;H01L21/205;H01L21/301 主分类号 C30B29/38
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