发明名称 |
METHOD FOR PRODUCING GROUP-III NITRIDE SUBSTRATE |
摘要 |
This method for producing a group-III nitride substrate has: a step of preparing a plurality of seed crystal substrates that are formed in a shape whereby said substrates are lined up and the side surfaces face each other; a step of adhering the seed crystal substrates to a base material using an adhesive such that the substrates are lined up and the side surfaces face each other; a step of growing group-III nitride crystals above the main surfaces of the seed crystal substrates such that the crystals which have grown above the main surfaces bond with each other and become unified; and a step of obtaining a group-III nitride substrate formed by the group-III nitride crystals. |
申请公布号 |
WO2015182520(A1) |
申请公布日期 |
2015.12.03 |
申请号 |
WO2015JP64771 |
申请日期 |
2015.05.22 |
申请人 |
SCIOCS COMPANY LIMITED |
发明人 |
YOSHIDA TAKEHIRO |
分类号 |
C30B29/38;B23K26/364;C23C16/01;C23C16/34;C30B25/20;H01L21/205;H01L21/301 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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