发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 A semiconductor device including an insulator, a first conductor as a source electrode, a second conductor as a drain electrode, a third conductor as a gate electrode, and an island-shaped semiconductor is provided. The first conductor includes a first side surface, a second side surface, and a third side surface. The second conductor includes a fourth side surface. The first conductor and the second conductor are positioned to make the first side surface and the fourth side surface face each other. The first conductor includes a first corner portion between the first side surface and the second side surface and a second corner portion between the second side surface and the third side surface. The first corner portion includes a portion having a smaller radius of curvature than the second corner portion.
申请公布号 WO2015181679(A1) 申请公布日期 2015.12.03
申请号 WO2015IB53669 申请日期 2015.05.19
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 MIYAIRI, HIDEKAZU
分类号 H01L29/786;H01L21/28;H01L21/336;H01L21/8234;H01L27/06;H01L29/78 主分类号 H01L29/786
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