MAGNETIC TUNNEL JUNCTION ELEMENT AND MANUFACTURING METHOD THEREFOR

摘要

A magnetic tunnel junction element and a manufacturing method therefor are provided. The magnetic tunnel junction element comprises: a seed layer having an FCC (001) crystal structure; a first ferromagnetic layer located on the seed layer and having perpendicular magnetic anisotropy; a tunneling barrier layer located on the first ferromagnetic layer; and a second ferromagnetic layer located on the tunneling barrier layer and having perpendicular magnetic anisotropy, wherein the first ferromagnetic layer has a BCC (001) crystal structure and does not include boron. Therefore, the magnetic tunnel junction element, which is more stable in terms of structure and heat, can be provided by using the seed layer for assisting the growth of crystals in a BCC (001) direction of a boron-free magnetic layer and for providing perpendicular magnetic anisotropy thereto, that is, W2N or TaN which is a nitrogen-doped metal material having a cubic crystal structure and having a similar lattice constant to that of a magnetic layer material.