发明名称 LITHOGRAPHY APPARATUS AND METHOD, AND METHOD OF MANUFACTURING ARTICLE
摘要 PROBLEM TO BE SOLVED: To provide a lithography apparatus advantageous in terms of overlay accuracy.SOLUTION: In a lithography apparatus for patterning on a substrate with a charged particle beam, an optical system has a function for adjusting the focal position of a charged particle beam and the irradiation position of a charged particle beam on the substrate, and the substrate is irradiated with a charged particle beam. A control section controls an optical system so as to perform patterning while adjusting the focal position and irradiation position based on the surface shape of the substrate for adjusting the focal position.
申请公布号 JP2015216225(A) 申请公布日期 2015.12.03
申请号 JP20140098050 申请日期 2014.05.09
申请人 CANON INC 发明人 SUGIYAMA YUSUKE;OISHI SATORU;INA HIDEKI;OGAWA SHIGEKI
分类号 H01L21/027;H01J37/305 主分类号 H01L21/027
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