发明名称 |
LIGHT EMITTING DEVICE |
摘要 |
A light-emitting diode comprises a substrate; a semiconductor stack on the substrate, wherein the semiconductor stack comprises a first semiconductor layer, an active layer for emitting a light, and a second semiconductor layer; a first oxide layer on the semiconductor stack, wherein the first oxide layer has a top surface opposite to the semiconductor stack, and the top surface comprises a first region and a second region; and a first pad on the second region; wherein the first region is rougher than the second region, wherein the first oxide layer comprises an impurity, and a concentration of the impurity of the first oxide layer in the first region is higher than that of the impurity of the first oxide layer in the second region. |
申请公布号 |
US2015349229(A1) |
申请公布日期 |
2015.12.03 |
申请号 |
US201514826495 |
申请日期 |
2015.08.14 |
申请人 |
EPISTAR CORPORATION |
发明人 |
WEI Chih-Hao;HUANG Yi-Luen |
分类号 |
H01L33/62;H01L33/22;H01L33/02 |
主分类号 |
H01L33/62 |
代理机构 |
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代理人 |
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主权项 |
1. A light-emitting diode, comprising:
a substrate; a semiconductor stack on the substrate, wherein the semiconductor stack comprises a first semiconductor layer, an active layer for emitting a light, and a second semiconductor layer; a first oxide layer on the semiconductor stack, wherein the first oxide layer has a top surface opposite to the semiconductor stack, and the top surface comprises a first region and a second region; and a first pad on the second region; wherein the first region is rougher than the second region, wherein the first oxide layer comprises an impurity, and a concentration of the impurity of the first oxide layer under the first region is higher than that of the impurity of the first oxide layer under the second region. |
地址 |
Hsinchu TW |