| 发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
| 摘要 |
A semiconductor device includes a substrate, a channel layer, a spacer layer, a barrier layer, and an oxidized cap layer. The channel layer is disposed on or above the substrate. The spacer layer is disposed on the channel layer. The barrier layer is disposed on the spacer layer. The oxidized cap layer is disposed on the barrier layer. The oxidized cap layer is made of oxynitride. |
| 申请公布号 |
US2015349107(A1) |
申请公布日期 |
2015.12.03 |
| 申请号 |
US201514721796 |
申请日期 |
2015.05.26 |
| 申请人 |
DELTA ELECTRONICS, INC. |
发明人 |
LIAO Wen-Chia |
| 分类号 |
H01L29/778;H01L29/66 |
主分类号 |
H01L29/778 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a substrate; a channel layer disposed on or above the substrate; a spacer layer disposed on the channel layer; a barrier layer disposed on the spacer layer; and an oxidized cap layer disposed on the barrier layer, wherein the oxidized cap layer is made of oxynitride. |
| 地址 |
Taoyuan City TW |
