| 发明名称 |
MIM CAPACITOR AND METHOD OF FORMING THE SAME |
| 摘要 |
According to an exemplary embodiment, a method of forming a MIM capacitor is provided. The method includes the following operations: providing a first metal layer; providing a dielectric layer over the first metal layer; providing a second metal layer over the dielectric layer; etching the second metal layer to define the metal-insulator-metal capacitor; and oxidizing a sidewall of the second metal layer. According to an exemplary embodiment, a MIM capacitor is provided. The MIM capacitor includes a first metal layer; a dielectric layer over the first metal layer; a second metal layer over the dielectric layer; and an oxidized portion in proximity to the second metal layer and made of oxidized second metal layer. |
| 申请公布号 |
US2015349047(A1) |
申请公布日期 |
2015.12.03 |
| 申请号 |
US201414287391 |
申请日期 |
2014.05.27 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company Limited |
发明人 |
KAO Chih-Wei;HUANG Chun-Chieh;YU Hsiao-Hui;HSU Hao-Wen;HSU Pin-Cheng;CHANG Chia-Der |
| 分类号 |
H01L49/02 |
主分类号 |
H01L49/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a metal-insulator-metal capacitor, comprising:
providing a first metal layer; providing a dielectric layer over the first metal layer; providing a second metal layer over the dielectric layer; etching the second metal layer to define the metal-insulator-metal capacitor; and oxidizing a sidewall of the second metal layer. |
| 地址 |
Hsinchu TW |
