RESISTOR MEMORY BIT-CELL AND CIRCUITRY AND METHOD OF MAKING THE SAME

摘要

A resistive memory cell control unit, integrated circuit, and method are described herein. The resistive memory cell control unit includes a switching transistor and a resistive memory cell. The switching transistor includes a gate disposed on a first surface of a semiconductor substrate, a source, and a drain each disposed in the semiconductor substrate, a gate terminal disposed on the first surface and connected to the gate, a source terminal disposed on the first surface and connected to the source, and a drain terminal connected to the drain and disposed on a second surface opposite the first surface. The resistive memory cell is disposed on the second surface and has a first end connected to the drain terminal. The structure provides a small area and simple manufacturing process for a resistive memory cell integrated circuit.

主权项

1. A semiconductor memory control unit comprising:
a semiconductor substrate having a first surface and a second surface opposite the first surface; a switching transistor; and a resistive memory cell; wherein the switching transistor comprises:
a gate disposed over the first surface of the semiconductor substrate;a source and a drain each disposed in the semiconductor substrate;a gate terminal disposed over the first surface and connected to the gate,a source terminal disposed over the first surface and connected to the source,a drain terminal disposed over the second surface of the semiconductor substrate and connected to the drain, and wherein the resistive memory cell is disposed over the second surface and has a first end connected to the drain terminal.