3DIC Interconnect Devices and Methods of Forming Same

摘要

An interconnect device and a method of forming the interconnect device are provided. Two integrated circuits are bonded together. A first opening is formed through one of the substrates. One or more dielectric films are formed along sidewalls of the first opening. A second opening is formed extending from the first opening to pads in the integrated circuits, while using some of the pads as hard masks. The first opening and the second opening are filled with a conductive material to form a conductive plug.

主权项

1. A semiconductor device comprising:
a first substrate having a first side and a second side opposite the first side; first vertically stacked interconnects formed within respective first dielectric layers on the first side of the first substrate; a second substrate having a third side and a fourth side opposite the third side, the first side of the first substrate facing the third side of the second substrate; second interconnects formed within respective second dielectric layers on the third side of the second substrate; and a conductive plug extending from the second side of the first substrate to a first conductive feature of the second interconnects, the conductive plug extending through at least two conductive features of the first vertically stacked interconnects.