DIRECTED SELF ASSEMBLY OF BLOCK COPOLYMERS TO FORM VIAS ALIGNED WITH INTERCONNECTS

摘要

A method of an aspect includes forming an interconnect line etch opening in a hardmask layer. The hardmask layer is over a dielectric layer that has an interconnect line disposed therein. The interconnect line etch opening is formed aligned over the interconnect line. A block copolymer is introduced into the interconnect line etch opening. The block copolymer is assembled to form a plurality of assembled structures that are spaced along a length of the interconnect line etch opening. An assembled structure is directly aligned over the interconnect line that is disposed within the dielectric layer.

主权项

1. A method comprising:
forming an opening in a hardmask layer over a dielectric layer; introducing a block copolymer in the opening in the hardmask layer; assembling the block copolymer to form a plurality of assembled structures that are spaced along a length of the opening in the hardmask layer, wherein an assembled structure is confined to and co-planar with the opening in the hardmask layer; forming an opening through the assembled structure; forming a first opening in the dielectric layer, the first opening having a cross-sectional dimension that is based on a cross-sectional dimension of the opening through the assembled structure; subsequent to forming the first opening in the dielectric layer, forming a second opening in the dielectric layer by using the opening in the hardmask layer as a mask; and subsequent to forming the second opening in the dielectric layer, filling the first and second openings in the dielectric layer with a conductive material.