发明名称 METHOD AND APPARATUS FOR RELOCATING DATA IN NON-VOLATILE MEMORY
摘要 Apparatus and methods implemented therein are disclosed for relocating data stored in pages of a non-volatile memory. The number of memory chunks with invalid data in an SLC type first page is determined and if the number is above a first threshold and above a second threshold, a bit error rate (BER) for the valid data in the set of memory chunks of the first page is compared with a first BER threshold. If the BER is below the first BER threshold, an error correcting code (ECC) for valid data in a set of memory chunks of a second page is computed and the invalid data of the first page with valid data is replaced with valid data from the second page and the computed ECC. The valid data of the first and second page is relocated to a third page.
申请公布号 US2015347228(A1) 申请公布日期 2015.12.03
申请号 US201414292372 申请日期 2014.05.30
申请人 SanDisk Technologies Inc. 发明人 Yang Niles;Huang Jianmin;Luo Ting
分类号 G06F11/10;G06F11/07;H03M13/35;G11C29/52 主分类号 G06F11/10
代理机构 代理人
主权项 1. A method for relocating data in a memory system comprising a memory and a memory controller, wherein the memory comprises a set of pages wherein each page comprises a set of memory chunks, the method comprising: determining by the memory controller that a first page is an SLC type page; in response to determining that the first page is an SLC type page, determining by the memory controller a number of memory chunks with invalid data in the first page; in response to determining that the number of memory chunks with invalid data in the first page is above a first threshold and above a second threshold, comparing a bit error rate (BER) for the valid data in the set of memory chunks of the first page with a first BER threshold; in response to determining the BER is below the first BER threshold, computing an error correcting code (ECC) for valid data in a set of memory chunks of a second page and replacing the invalid data of the first page with valid data from the second page and the computed ECC; and relocating the valid data of the second page and the valid data of the first page to a third page, without computing an ECC for valid data in the set of memory chunks of the first page.
地址 Plano TX US