| 摘要 |
A semiconductor device (1) is provided with: a first trench (611) that is formed in a surface of a semiconductor substrate (10); and a second trench (612), which is formed in the surface of the semiconductor substrate (10), and in a planar view of the surface of the semiconductor substrate (10), said second trench extending in the direction different from the direction in which the first trench (611) extends, and intersecting the first trench (611). Furthermore, the semiconductor device (1) is provided with: a gate insulating film (62), which covers the inner surfaces of the first trench (611) and the second trench (612), and an inner surface (301) of an intersecting section (30) of the first trench and the second trench; and a gate electrode (63), which is formed in the first trench (611) and the second trench (612), and which faces the semiconductor substrate (10) with the gate insulating film (62) therebetween. Furthermore, the semiconductor device (1) is also provided with an n-type emitter region (24), which is formed in the semiconductor substrate (10), is exposed from the surface of the semiconductor substrate (10), is in contact with the gate insulating film (62) in the first trench (611), and is not in contact with the gate insulating film (62) that is formed on the inner surface (301) of the intersecting section (30) of the first trench (611) and the second trench (612). |
