发明名称 PLASMA ENHANCED PHYSICAL VAPOR DEPOSITION SOURCE AND DEPOSITION APPARATUS USING SAME
摘要 A plasma enhanced physical vapor deposition source is set forth. The plasma enhanced physical vapor deposition source that is the present invention comprises: a crucible having a vaporization material receiving space therein and a plasma generating space above the vaporization material receiving space; a vaporization material inside the vaporization material receiving space; heating means configured to vaporize the vaporization material; plasma generating means disposed in the plasma generating space and configured to guide plasma from the vaporization material vaporized by the heating means; and an ejecting unit formed on the top surface of the crucible and configured to guide the vaporization material formed into plasma to the outside of the crucible.
申请公布号 WO2015182977(A1) 申请公布日期 2015.12.03
申请号 WO2015KR05282 申请日期 2015.05.27
申请人 KOREA BASIC SCIENCE INSTITUTE 发明人 LEE, KANG IL;CHOI, YONG SUP
分类号 C23C14/22 主分类号 C23C14/22
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