发明名称 |
PLASMA ENHANCED PHYSICAL VAPOR DEPOSITION SOURCE AND DEPOSITION APPARATUS USING SAME |
摘要 |
A plasma enhanced physical vapor deposition source is set forth. The plasma enhanced physical vapor deposition source that is the present invention comprises: a crucible having a vaporization material receiving space therein and a plasma generating space above the vaporization material receiving space; a vaporization material inside the vaporization material receiving space; heating means configured to vaporize the vaporization material; plasma generating means disposed in the plasma generating space and configured to guide plasma from the vaporization material vaporized by the heating means; and an ejecting unit formed on the top surface of the crucible and configured to guide the vaporization material formed into plasma to the outside of the crucible. |
申请公布号 |
WO2015182977(A1) |
申请公布日期 |
2015.12.03 |
申请号 |
WO2015KR05282 |
申请日期 |
2015.05.27 |
申请人 |
KOREA BASIC SCIENCE INSTITUTE |
发明人 |
LEE, KANG IL;CHOI, YONG SUP |
分类号 |
C23C14/22 |
主分类号 |
C23C14/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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