CONFIGURATION OF PORTIONS OF A POWER DEVICE WITHIN A SILICON CARBIDE CRYSTAL

摘要

In one general aspect, an apparatus can include a silicon carbide (SiC) crystal having a top surface aligned along a plane and the SiC crystal having an off-orientation direction. The apparatus including a semiconductor device defined within the SiC crystal. The semiconductor device having an outer perimeter where the outer perimeter has a first side aligned along the off-orientation direction and a second side aligned along a direction non-parallel to the off-orientation direction. The first side of the outer perimeter of the semiconductor device having a length longer than the second side of the outer perimeter of the semiconductor device.

主权项

1. An apparatus, comprising:
a silicon carbide (SiC) crystal having a top surface aligned along a plane, the SiC crystal having an off-orientation direction from a basal (0001) plane; and a semiconductor device having at least a portion defined within the SiC crystal, the semiconductor device being a vertically oriented device, the semiconductor device having an outer perimeter, the outer perimeter having a first side aligned along the off-orientation direction and a second side aligned along a direction non-parallel to the off-orientation direction, the first side of the outer perimeter of the semiconductor device having a length longer than the second side of the outer perimeter of the semiconductor device.