| 主权项 |
1. A method for producing a semiconductor device comprising:
preparing a wafer having a plurality of portions each of which serves as a semiconductor device and having an insulator having a plurality of openings on the plurality of respective portions; forming an embedding member in each of the plurality of openings and on the insulator; removing at least a part of the embedding member formed on the insulator; and after the removal of at least a part of the embedding member, planarizing the embedding member, wherein the plurality of portions have a first portion and a second portion positioned at an outer side of the wafer than the first portion, each of the first portion and the second portion has a first region and a second region at a position different from a position of the first region, the plurality of openings are disposed in the first region with a density higher than a density in the second region in each of the first portion and the second portion, and the removal of at least a part of the embedding member includes removing the embedding member positioned in the second region of the first portion, and removing the embedding member positioned in the second region of the second portion, wherein a first removal amount in the removal of the embedding member positioned in the second region of the first portion and a second removal amount in the removal of the embedding member positioned in the second region of the second portion are different from each other. |
