发明名称 |
SEMICONDUCTOR DEVICE WITH VOIDS WITHIN SILICON-ON-INSULATOR (SOI) STRUCTURE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE |
摘要 |
A semiconductor device with voids within a silicon-on-insulator (SOI) structure and a method of forming the semiconductor device are provided. Voids are formed within a Buried Oxide layer (BOX layer) of the silicon-on-insulator (SOI) semiconductor to enhance a performance index of an RF-SOI switch. The semiconductor device with voids within a silicon-on-insulator (SOI) structure includes a semiconductor substrate; an insulating layer disposed on the substrate; a silicon-on-insulator (SOI) layer disposed on the insulating layer; a device isolation layer and an active area disposed within the SOI layer; one or more voids disposed within the insulating layer; and a sealing insulating sealing an opening of the void. |
申请公布号 |
US2015348825(A1) |
申请公布日期 |
2015.12.03 |
申请号 |
US201514612672 |
申请日期 |
2015.02.03 |
申请人 |
Magnachip Semiconductor, Ltd. |
发明人 |
HEBERT Francois |
分类号 |
H01L21/764;H01L29/06;H01L27/12 |
主分类号 |
H01L21/764 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device with voids within a silicon-on-insulator (SOI) structure comprising:
a semiconductor substrate; an insulating layer disposed on the substrate; a silicon-on-insulator (SOI) layer disposed on the insulating layer; a device isolation layer and an active area disposed within the SOI layer; one or more voids disposed within the insulating layer; and a sealing insulating sealing an opening of the void. |
地址 |
Cheongju-si KR |