| 摘要 |
Disclosed is a light emitting device including a light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer, a first electrode electrically connected with the first conductive semiconductor layer, a mirror layer under the light emitting structure, a window semiconductor layer between the mirror layer and the light emitting structure, a reflective layer under the mirror layer, a conductive contact layer between the reflective layer and the window semiconductor layer and in contact with the second conductive semiconductor layer, and a conductive support substrate under the reflective layer. The window semiconductor layer includes a C-doped P-based semiconductor doped with a higher dopant concentration. The conductive contact layer includes material different from that of the mirror layer with a thickness thinner than that of the window semiconductor layer. |
| 主权项 |
1. A light emitting device comprising:
a light emitting structure comprising a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer; a first electrode electrically connected with the first conductive semiconductor layer; a mirror layer under the light emitting structure; a window semiconductor layer between the mirror layer and the light emitting structure; a reflective layer under the mirror layer; a conductive contact layer disposed between the reflective layer and the window semiconductor layer and contacted with the second conductive semiconductor layer; and a support substrate having a conductive property under the reflective layer, wherein the window semiconductor layer comprises a phosphorus (P)-based semiconductor doped with carbon (C) and has a dopant concentration higher than a dopant concentration of the second conductive semiconductor layer, and the conductive contact layer includes a material different from a material of the mirror layer, and has a thickness thinner than a thickness of the window semiconductor layer. |
