| 发明名称 |
HIGH BRIGHTNESS LIGHT EMITTING DIODE STRUCTURE AND THE MANUFACTURING METHOD THEREOF |
| 摘要 |
A light-emitting diode structure comprises a first semiconductor layer; a second semiconductor layer under the first semiconductor layer; a light-emitting layer between the first semiconductor layer and the second semiconductor layer for emitting a light; a first electrical pad on the first semiconductor layer for wire bonding; a first extension connecting to the first electrical pad; and a first reflective layer covering the first extension and exposing the first electrical pad, wherein the first electrical pad and the first extension have the same thickness, and the reflectivity of the first reflective layer is higher than that of the first extension. |
| 申请公布号 |
US2015349210(A1) |
申请公布日期 |
2015.12.03 |
| 申请号 |
US201514825899 |
申请日期 |
2015.08.13 |
| 申请人 |
EPISTAR CORPORATION |
发明人 |
Ou Chen;Tu Chun-Hsiang;Kuo De-Shan;Ko Chun-Teng;Chiu Po-Shun;Hsu Chia-Liang |
| 分类号 |
H01L33/46;H01L33/40;H01L33/38 |
主分类号 |
H01L33/46 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A light-emitting diode structure, comprising:
a first semiconductor layer; a second semiconductor layer under the first semiconductor layer; a light-emitting layer between the first semiconductor layer and the second semiconductor layer for emitting a light; a first electrical pad on the first semiconductor layer; a first extension connecting to the first electrical pad; and a first reflective layer covering the first extension and exposing the first electrical pad, wherein the reflectivity of the first reflective layer is higher than that of the first extension. |
| 地址 |
Hsinchu TW |
