NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING SAME

摘要

Disclosed herein are a nitride semiconductor light-emitting device and a method of manufacturing the same, which are capable of reducing the number of masks by introducing a three-mask process so that the processing becomes simpler and the production yield can be improved.

主权项

1. A nitride semiconductor light-emitting device comprising:
an n-type nitride layer; an active layer formed on the n-type nitride layer; a p-type nitride layer formed on the active layer; a current blocking pattern formed on the p-type nitride layer; a transparent conductive pattern covering the p-type nitride layer and the current blocking pattern and having edges with tapered cross sections symmetric to each other; and a p-electrode pad disposed at a location corresponding to a location where the current blocking pattern is located and coming in direct contact with the transparent conductive pattern.