发明名称 |
METHOD OF FORMING CONTACTS FOR A BACK-CONTACT SOLAR CELL |
摘要 |
Methods of forming contacts for solar cells are described. In one embodiment, a method includes forming a silicon layer above a substrate, forming and patterning a solid-state p-type dopant source on the silicon layer, forming an n-type dopant source layer over exposed regions of the silicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped silicon regions among a plurality of p-type doped silicon regions. |
申请公布号 |
US2015349158(A1) |
申请公布日期 |
2015.12.03 |
申请号 |
US201514824978 |
申请日期 |
2015.08.12 |
申请人 |
Manning Jane |
发明人 |
Manning Jane |
分类号 |
H01L31/0352;H01L31/068;H01L31/0368;H01L31/0224 |
主分类号 |
H01L31/0352 |
代理机构 |
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代理人 |
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主权项 |
1. A solar cell, comprising:
a dielectric layer formed on a substrate; a plurality of n-type dopant-containing silicon regions formed between a plurality of p-type dopant-containing silicon regions; and trenches formed in the plurality of n-type dopant-containing silicon regions and partially in the substrate, wherein the trenches are formed between the plurality of n-type dopant-containing silicon regions and the p-type dopant-containing silicon regions; and conductive contacts in contact with the plurality of n-type dopant-containing silicon regions and the p-type dopant-containing silicon regions. |
地址 |
Woodside CA US |