发明名称 METHOD OF FORMING CONTACTS FOR A BACK-CONTACT SOLAR CELL
摘要 Methods of forming contacts for solar cells are described. In one embodiment, a method includes forming a silicon layer above a substrate, forming and patterning a solid-state p-type dopant source on the silicon layer, forming an n-type dopant source layer over exposed regions of the silicon layer and over a plurality of regions of the solid-state p-type dopant source, and heating the substrate to provide a plurality of n-type doped silicon regions among a plurality of p-type doped silicon regions.
申请公布号 US2015349158(A1) 申请公布日期 2015.12.03
申请号 US201514824978 申请日期 2015.08.12
申请人 Manning Jane 发明人 Manning Jane
分类号 H01L31/0352;H01L31/068;H01L31/0368;H01L31/0224 主分类号 H01L31/0352
代理机构 代理人
主权项 1. A solar cell, comprising: a dielectric layer formed on a substrate; a plurality of n-type dopant-containing silicon regions formed between a plurality of p-type dopant-containing silicon regions; and trenches formed in the plurality of n-type dopant-containing silicon regions and partially in the substrate, wherein the trenches are formed between the plurality of n-type dopant-containing silicon regions and the p-type dopant-containing silicon regions; and conductive contacts in contact with the plurality of n-type dopant-containing silicon regions and the p-type dopant-containing silicon regions.
地址 Woodside CA US