| 摘要 |
The present invention provides an oxide thin film transistor and a manufacturing method thereof, an array substrate and a display device. The oxide thin film transistor of the present invention comprises a substrate, and a gate, a gate insulation layer, an oxide semiconductor active layer, a source and a drain, which are sequentially formed on the substrate, wherein, the oxide thin film transistor further comprises a transition layer formed between the oxide semiconductor active layer and the source and between the oxide semiconductor active layer and the drain, the transition layer comprises a metal layer and a protective layer, and the protective layer is in contact with the oxide semiconductor active layer, the metal layer is arranged on the protective layer and in contact with the source and the drain, and the protective layer is made of a metal oxide. |
