MOSFET HAVING DUAL-GATE CELLS WITH AN INTEGRATED CHANNEL DIODE

摘要

A semiconductor device includes MOSFET cells having a drift region of a first conductivity type. A first and second active area trench are in the drift region. A split gate uses the active trenches as field plates or includes planar gates between the active trenches including a MOS gate electrode (MOS gate) and a diode gate electrode (diode gate). A body region of the second conductivity type in the drift region abutts the active trenches. A source of the first conductivity type in the body region includes a first source portion proximate to the MOS gate and a second source portion proximate to the diode gate. A vertical drift region uses the drift region below the body region to provide a drain. A connector shorts the diode gate to the second source portion to provide an integrated channel diode. The MOS gate is electrically isolated from the first source portion.

主权项

1. A semiconductor device, comprising:
a substrate; a metal oxide semiconductor field effect transistor (MOSFET) cell including:
a drift region of a first conductivity type in the substrate;active trenches formed adjacent to said drift region, said active trenches including an electrically conductive filler material surrounded by a trench dielectric liner;a split gate comprising a MOS gate and a diode gate over said drift region and between said active trenches, said split gate using said active trenches as field plates;a body region of a second conductivity type opposite from said first conductivity type abutting said active trenches, and the body region including a first body region proximate to said MOS gate and a second body region proximate to said diode gate;a source region of said first conductivity type formed in said body region, the source region including a first source portion proximate to said MOS gate and a second source portion proximate to said diode gate;a drain having a drain contact formed on a bottom side of said substrate opposing from the split gate, anda connector connecting said diode gate to said second source portion to form a channel diode integrated to a MOSFET controlled by said MOS gate, wherein said MOS gate is electrically isolated from said first source portion.