发明名称 ELECTRONIC DEVICE COMPRISING A SEMICONDUCTOR MEMORY UNIT
摘要 Devices and methods based on disclosed technology include, among others, an electronic device capable of improving a signal transfer characteristic and a method for fabricating the same. Specifically, an electronic device in one implementation includes a plurality of buried gates formed in a substrate, open parts formed in the substrate on both sides of the buried gate, isolation layers each formed between a sidewall of the open part and a sidewall of the buried gate, source/drain regions formed in the substrate under the respective open parts, and contact plugs buried in the respective open parts.
申请公布号 US2015349074(A1) 申请公布日期 2015.12.03
申请号 US201514821457 申请日期 2015.08.07
申请人 SK hynix Inc. 发明人 Song Seok-Pyo;Yi Jae-Yun;Kim Se-Dong
分类号 H01L29/423;H01L27/22;H01L21/8234;H01L27/24 主分类号 H01L29/423
代理机构 代理人
主权项
地址 Icheon-Si KR