SEMICONDUCTOR DEVICE HAVING TRENCH ADJACENT TO RECEIVING AREA AND METHOD OF FORMING THE SAME

摘要

In some embodiments in accordance with the present disclosure, a semiconductor device including a semiconductor substrate is received. An interconnect structure is provided over the semiconductor substrate, and a passivation is provided over the interconnect structure. The passivation includes an opening such that a portion of the interconnect structure is exposed. Moreover, a dielectric is provided over the passivation, and a post-passivation interconnect (PPI) is provided over the dielectric. The PPI is configured to connect with the exposed portion of the interconnect structure through an opening in the dielectric. Furthermore, the PPI includes a receiving area for receiving a conductor, and a trench adjacent to the receiving area. In certain embodiments, the receiving area is defined by the trench.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate; an interconnect structure over the semiconductor substrate, a passivation over the interconnect structure and comprising an opening to expose a portion of the interconnect structure; a dielectric over the passivation; and a post-passivation interconnect (PPI) over the dielectric, and the PPI configured to connect with the exposed portion of the interconnect structure through an opening in the dielectric, wherein the PPI comprises a receiving area configured to receive a conductor, wherein the PPI includes a trench adjacent to the receiving area.