PROTECTIVE VIA CAP FOR IMPROVED INTERCONNECT PERFORMANCE

摘要

Exemplary methods of forming a semiconductor structure may include etching a via through a semiconductor structure to expose a first circuit layer interconnect metal. The methods may include forming a layer of a material overlying the exposed first circuit layer interconnect metal. The methods may also include forming a barrier layer within the via having minimal coverage along the bottom of the via. The methods may additionally include forming a second circuit layer interconnect metal overlying the layer of material.

主权项

1. A method of forming a semiconductor structure comprising:
etching a via through a semiconductor structure, wherein the etching exposes a first metal; forming a layer of material overlying the exposed first metal; depositing a barrier layer within the etched via, wherein the as-deposited barrier layer is characterized by a first thickness along the sidewalls of the via, and a second thickness less than the first thickness overlying the layer of material; and forming a second metal overlying the layer of material.