SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor device includes a substrate having a first side and a second side opposite to the first side; a through substrate via (TSV) structure protruding from a surface of the substrate on the second side; a block layer conformally covering the surface of the substrate and the TSV structure; a first dielectric layer covering the block layer except for a portion of the block layer that is directly on the TSV structure; a second dielectric layer on the first dielectric layer; and a damascened circuit pattern in the second dielectric layer. The second dielectric layer is in direct contact with the first dielectric layer. The damascened circuit pattern is in direct contact with the TSV structure.

主权项

1. A semiconductor device, comprising:
a substrate having a first side and a second side opposite to the first side; a through substrate via (TSV) structure protruding from a surface of the substrate on the second side; a block layer conformally covering the surface of the substrate and the TSV structure; a first dielectric layer covering the block layer except for a portion of the block layer that is directly on the TSV structure; a second dielectric layer on the first dielectric layer, wherein the second dielectric layer is in direct contact with the first dielectric layer; and a damascened circuit pattern in the second dielectric layer, wherein the damascened circuit pattern is in direct contact with the TSV structure.