Hard Mask Removal Scheme

摘要

A method includes forming a barrier layer in a via hole and over a hard mask layer. The hard mask layer is disposed over a dielectric layer. The via hole is located through the dielectric layer and the hard mask layer. A filler layer is formed in the via hole and over the barrier layer. The filler layer and the hard mask layer are removed. A metal layer is formed in the via hole.

主权项

1. A method of forming a semiconductor device, the method comprising:
forming a dielectric layer over a substrate; forming a mask layer over the dielectric layer, the mask layer and the dielectric layer having an opening; forming a barrier layer along sidewalls and a bottom of the opening; removing the mask layer; and forming a metal layer in the opening.