| 摘要 |
A method for processing a substrate in a process chamber is provided. A plurality of cycles is provided to process the substrate, wherein each cycle comprises the steps of providing a flow of a first process gas into the process chamber, stopping the flow of the first process gas into the process chamber, providing a flow of a first transition gas into the process chamber, wherein the first transition gas neutralizes a component of the first process gas, stopping the flow of the first transition gas into the process chamber, providing a flow of a second process gas into the process chamber, stopping the second process gas into the process chamber, and maintaining a continuous plasma during the cycle. |
