| 发明名称 |
Hall Effect Sensor Arrangement |
| 摘要 |
A Hall effect sensor arrangement comprises at least four (2×n) Hall effect components (where n=integer and n≧2), wherein the Hall effect components each have two contact terminals C1, C2 and a signal terminal T1-T4, wherein the contact terminals of the at least four Hall effect components are interconnected with one another such that the at least four Hall effect components are arranged together in a parallel-series interconnection, and comprises a control device 150, which is couplable to the signal terminals T1-T4 of the at least four Hall effect components in a plurality of operating phases such that in the different operating phases at least one of the Hall effect components responds to a first magnetic field component B1 in a first detection direction, and at least another of the Hall effect components responds to a second magnetic field component B2 in a second detection direction, wherein the second detection direction is different than the first detection direction. |
| 申请公布号 |
US2015346289(A1) |
申请公布日期 |
2015.12.03 |
| 申请号 |
US201514697158 |
申请日期 |
2015.04.27 |
| 申请人 |
Infineon Technologies AG |
发明人 |
Ausserlechner Udo |
| 分类号 |
G01R33/00;G01R33/07 |
主分类号 |
G01R33/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A Hall effect sensor arrangement (100), comprising the following features:
at least four (2×n) Hall effect components (where n=integer and n≧2), wherein the Hall effect components each have two contact terminals (C1, C2) and a signal terminal (T1-T4; T#), wherein the contact terminals of the at least four Hall effect components are interconnected with one another such that the at least four Hall effect components are arranged together in a parallel-series interconnection, and a control device (150), which is couplable to the signal terminals (T1-14; T#) of the at least four Hall effect components in a plurality of operating phases such that in the different operating phases at least one of the Hall effect components responds to a first magnetic field component (B1) in a first detection direction, and at least another of the Hall effect components responds to a second magnetic field component (B2) in a second detection direction, wherein the second detection direction is different than the first detection direction. |
| 地址 |
Neubiberg DE |
