| 发明名称 |
BANDGAP VOLTAGE CIRCUIT WITH LOW-BETA BIPOLAR DEVICE |
| 摘要 |
Representative implementations of devices and techniques provide a reduction in the spread of a bandgap voltage of a bandgap reference circuit. The biasing current for a target bipolar device is conditioned by passing it through one or more like bipolar devices prior to biasing the target bipolar device. |
| 申请公布号 |
US2015346754(A1) |
申请公布日期 |
2015.12.03 |
| 申请号 |
US201414288762 |
申请日期 |
2014.05.28 |
| 申请人 |
Infineon Technologies Austria AG |
发明人 |
TEO Yong Siang |
| 分类号 |
G05F3/02 |
主分类号 |
G05F3/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An apparatus, comprising:
a first bipolar device, a base-emitter voltage of the first bipolar device used to determine a bandgap voltage value; and a second bipolar device coupled in series to the first bipolar device, and arranged to pass a biasing current to bias the first bipolar device while the bandgap voltage value is determined, reducing a voltage spread of the bandgap voltage. |
| 地址 |
Villach AT |
