RESIST COMPOSITION AND PATTERNING PROCESS

摘要

A pattern is formed by coating a resist composition comprising a resin component comprising recurring units of formula (1) and a photoacid generator of formula (2) onto a substrate, baking, exposure, PEB and developing in an organic solvent. In formulae (1) and (2), R1 and R2 are C1-C3 alkyl, R4 is hydrogen or methyl, A is hydrogen or trifluoromethyl, R101, R102 and R103 are hydrogen or a monovalent hydrocarbon group, m and n are 0-5, p is 0-4, and L is a single bond or a divalent hydrocarbon group.;

主权项

1. A resist composition comprising (A) a resin component comprising recurring units having the general formula (1) and (B) a photoacid generator having the general formula (2): wherein R1 and R2 are each independently C1-C3 alkyl, R4 is hydrogen or methyl, A is hydrogen or trifluoromethyl, R101, R102 and R103 are each independently hydrogen or a straight, branched or cyclic C1-C20 monovalent hydrocarbon group which may be separated by a heteroatom, m and n each are an integer of 0 to 5, p is an integer of 0 to 4, and L is a single bond or a straight, branched or cyclic C1-C20 divalent hydrocarbon group which may be substituted with or separated by a heteroatom.