METAL REMOVAL

摘要

Methods are described herein for etching metal films, such as cobalt and nickel, which are difficult to volatize. The methods include exposing a metal film to a chlorine-containing precursor (e.g. Cl2). Chlorine is then removed from the substrate processing region. A carbon-and-nitrogen-containing precursor (e.g. TMEDA) is delivered to the substrate processing region to form volatile metal complexes which desorb from the surface of the metal film. The methods presented remove metal while very slowly removing the other exposed materials.

主权项

1. A method of etching metal from a substrate, the method comprising:
transferring the substrate into a substrate processing region; flowing a halogen-containing precursor into the substrate processing region, wherein the substrate processing region is plasma-free during the flowing of the halogen-containing precursor; purging the substrate processing region with a relatively inert gas to remove the halogen-containing precursor from the substrate processing region; flowing a carbon-and-nitrogen-containing precursor in to the substrate processing region, wherein the substrate processing region is plasma-free during the flowing of the carbon-and-nitrogen-containing precursor and flowing of the carbon-and-nitrogen-containing precursor occurs after purging the substrate processing region; removing metal from the substrate; and removing the substrate from the substrate processing region.