| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emission device that can be enhanced in light emission efficiency.SOLUTION: A semiconductor light emission device has a first semiconductor layer, a light emission layer provided on a second face of the first semiconductor device, a second semiconductor layer provided on the light emission layer, a p-side electrode which is provided on the second semiconductor layer and has reflectivity for light emitted from the light emission layer, plural n-side electrodes provided onto the second face, an insulation film provided on the second semiconductor layer between the plural n-side electrodes, plural n-side vias provided on the plural n-side electrodes, a connection portion which is provided on the insulation film and connects the plural n-side vias, and an n-side reflection electrode which has higher reflectivity for light emitted from the light emission layer than the n-side electrode and is formed of the same material as the p-side electrode. |
