TI-IGBT AND FORMATION METHOD THEREOF

摘要

A TI-IGBT, comprising a first semiconductor substrate, a second semiconductor substrate, and a first doped layer; a short circuit region and a collector region disposed in parallel are formed in the first semiconductor substrate; the short circuit region and the collector region have different doping types; the second semiconductor substrate is located on the upper surface of the first semiconductor substrate, and has the same doping type with the short circuit region; the first doped layer is located between the first semiconductor substrate and the second semiconductor substrate, and covers at least the collector region; the first doped layer has the same doping type with the second semiconductor substrate, and has a doping concentration smaller than that of the second semiconductor substrate.

主权项

1. A TI-IGBT, comprising:
a first semiconductor substrate, wherein a short-circuit region and a collector region disposed in parallel are formed in the first semiconductor substrate, and a doping type of the short-circuit region is different from a doping type of the collector region; a second semiconductor substrate, wherein the second semiconductor substrate is located above an upper surface of the first semiconductor substrate, and a doping type of the second semiconductor substrate is the same as the doping type of the short-circuit region; and a first doped layer, wherein the first doped layer is located between the first semiconductor substrate and the second semiconductor substrate, and the first doped layer covers at least the collector region in the first semiconductor substrate, wherein a doping type of the first doped layer is the same as the doping type of the second semiconductor substrate, and a doping concentration of the first doped layer is lower than a doping concentration of the second semiconductor substrate.