GATE STRUCTURES FOR CMOS BASED INTEGRATED CIRCUIT PRODUCTS

摘要

An integrated circuit product includes an NMOS transistor having a gate structure comprised of an NMOS gate insulation layer comprised of a high-k gate insulation material, an NMOS metal silicide region positioned above the NMOS gate insulation layer, and an NMOS metal layer positioned on the NMOS metal silicide region, and a PMOS transistor having a gate structure comprised of a PMOS gate insulation layer comprised of the high-k gate insulation material, a first PMOS metal layer positioned on the PMOS gate insulation layer, a PMOS metal silicide region positioned above the first PMOS metal layer, wherein the PMOS metal silicide region and the NMOS metal silicide region are comprised of the same metal silicide, and a second PMOS metal layer positioned on the PMOS metal silicide region, wherein the NMOS metal layer and second PMOS metal layer are comprised of the same material.

主权项

1. An integrated circuit product, comprising:
an NMOS transistor having a gate structure comprised of:
an NMOS gate insulation layer comprised of a high-k gate insulation material;an NMOS metal silicide region positioned above said NMOS gate insulation layer, wherein said NMOS metal silicide region has a generally rectangular cross-sectional configuration; andan NMOS metal layer positioned on said NMOS metal silicide region; and a PMOS transistor having a gate structure comprised of:
a PMOS gate insulation layer comprised of said high-k gate insulation material;a first PMOS metal layer positioned on said PMOS gate insulation layer;a PMOS metal silicide region positioned above said first PMOS metal layer, wherein said PMOS metal silicide region has a generally T-shaped cross-sectional configuration and wherein said PMOS metal silicide region and said NMOS metal silicide region are comprised of the same metal silicide; anda second PMOS metal layer positioned on said PMOS metal silicide region, wherein said NMOS metal layer and said second PMOS metal layer are comprised of the same material.