SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A semiconductor device has a resistor area and wiring area selectively disposed on a semiconductor substrate. In this semiconductor device, a second interlayer insulating film is formed above the semiconductor substrate, and a thin-film resistor is disposed on the second interlayer insulating film in the resistor area. Vias that contact the thin-film resistor from below are formed in the second interlayer insulating film. A wiring line is disposed on the second interlayer insulating film in the wiring area. A dummy wiring line that covers the thin-film resistor from above is disposed in a third wiring layer that is in the same layer as the wiring line, and an insulating film is interposed between the thin-film resistor and the dummy wiring line.

主权项

1. A semiconductor device having a capacitor area and a wiring area selectively disposed on a semiconductor substrate, comprising:
an interlayer insulating film disposed above the semiconductor substrate; a thin-film metal film that is disposed on the interlayer insulating film and that is in the capacitor area, the thin-film metal film serves as a bottom electrode of the capacitor; a via that is formed in the interlayer insulating film and that contacts the thin-film metal film from below; a wiring line that is disposed above the interlayer insulating film and that is in the wiring area; a first dummy wiring line that is disposed in a wiring layer in the same layer as the wiring line and that covers the thin-film metal film from above, the first dummy wiring line serves as a top electrode of the capacitor; and a capacitor dielectric film interposed between the thin-film metal film and the first dummy wiring line.