Dummy Structure for Chip-on-Wafer-on-Substrate

摘要

Apparatus, and methods of manufacture thereof, in which metal is deposited into openings, thus forming a plurality of metal pads, a plurality of through-silicon-vias (TSVs), a plurality of metal lines, a plurality of first dummy structures, and a plurality of second dummy structures. Ones of the plurality of first dummy structures each have a first width that is at least about three times greater than a second width of each of the plurality of metal lines, and ones of the plurality of second dummy structures each have a third width that is at least about five times greater than the second width of each of the plurality of metal lines.

主权项

1. An apparatus, comprising:
a substrate; a dielectric layer disposed over the substrate; a plurality of metal pads disposed in the dielectric layer; a plurality of through-silicon-vias (TSVs) extending into the substrate, wherein each of the plurality of through-silicon-vias (TSVs) is located below a corresponding one of the plurality of metal pads; a plurality of metal lines disposed in the dielectric layer; a plurality of first dummy structures disposed in the dielectric layer, wherein each of the plurality of first dummy structures has a first width that is at least about three times greater than a second width of each of the plurality of metal lines; and a plurality of second dummy structures disposed in the dielectric layer, wherein each of the plurality of second dummy structures has a third width that is at least about five times greater than the second width of each of the plurality of metal lines.