| 发明名称 |
METHOD FOR FORMING ISOLATION MEMBER IN TRENCH OF SEMICONDUCTOR SUBSTRATE |
| 摘要 |
A method for forming an isolation member in a trench of a substrate may include the following steps: performing a first deposition process to form a first isolation material set, which is at least partially positioned in the trench; partially removing the first isolation material set, such that a remaining portion of the first isolation material set remains in the trench; after the first isolation material set has been partially removed, performing a fluorine-reduction process on at least the remaining portion of the first isolation material set; after the fluorine-reduction process, performing a second deposition process to form a second isolation material set, which is at least partially positioned in the trench, wherein the second isolation material set includes the remaining portion of the first isolation material set; and processing the second isolation material set for forming the isolation member. |
| 申请公布号 |
US2015348829(A1) |
申请公布日期 |
2015.12.03 |
| 申请号 |
US201514703181 |
申请日期 |
2015.05.04 |
| 申请人 |
Semiconductor Manufacturing International (Shanghai) Corporation |
发明人 |
YAN Yan;YANG Jun |
| 分类号 |
H01L21/762;H01L21/3105 |
主分类号 |
H01L21/762 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming an isolation member in a trench of a substrate, the method comprising:
performing a first deposition process to form a first isolation material set, which is at least partially positioned in the trench; partially removing the first isolation material set, such that a remaining portion of the first isolation material set remains in the trench; after the first isolation material set has been partially removed, performing a first fluorine-reduction process on at least the remaining portion of the first isolation material set; after the first fluorine-reduction process has been performed, performing a second deposition process to form a second isolation material set, which is at least partially positioned in the trench and includes the remaining portion of the first isolation material set; and processing the second isolation material set for forming the isolation member. |
| 地址 |
Shanghai CN |
