| 摘要 |
A lighting device according to embodiments of the invention includes a substrate with a plurality of holes that extend from a surface of the substrate. A non-III- nitride material is disposed within the plurality of holes. The surface of the substrate is free of the non-III-nitride material. A semiconductor structure is grown on the surface of the substrate. The semiconductor structure includes a light emitting layer disposed between an n- type region and a p-type region. |
