发明名称 |
SEMICONDUCTOR MANUFACTURING METHOD AND SEMICONDUCTOR MANUFACTURING APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing method capable of preventing an element from getting damaged by an electromagnetic field during anneal processing of the element placed on a substrate by using plasma while generating the plasma in an electromagnetic field.SOLUTION: The semiconductor manufacturing method is for heat treating a substrate S with plasma while moving the substrate S formed with an element relative to a plasma generator 12 which generates plasma P by subjecting a plasma gas to an electromagnetic field. In a state that a second surface Sb at the side opposite to a first surface Sa of the substrate S formed with the element is faced to the plasma generator 12, the second surface Sb of the substrate S is irradiated with a plasma P of the plasma generator 12. |
申请公布号 |
JP2015216165(A) |
申请公布日期 |
2015.12.03 |
申请号 |
JP20140096866 |
申请日期 |
2014.05.08 |
申请人 |
PANASONIC IP MANAGEMENT CORP |
发明人 |
KITAGAWA DAI;OKUMURA TOMOHIRO |
分类号 |
H01L21/324;H01L21/265;H05H1/30 |
主分类号 |
H01L21/324 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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