发明名称 SEMICONDUCTOR MANUFACTURING METHOD AND SEMICONDUCTOR MANUFACTURING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing method capable of preventing an element from getting damaged by an electromagnetic field during anneal processing of the element placed on a substrate by using plasma while generating the plasma in an electromagnetic field.SOLUTION: The semiconductor manufacturing method is for heat treating a substrate S with plasma while moving the substrate S formed with an element relative to a plasma generator 12 which generates plasma P by subjecting a plasma gas to an electromagnetic field. In a state that a second surface Sb at the side opposite to a first surface Sa of the substrate S formed with the element is faced to the plasma generator 12, the second surface Sb of the substrate S is irradiated with a plasma P of the plasma generator 12.
申请公布号 JP2015216165(A) 申请公布日期 2015.12.03
申请号 JP20140096866 申请日期 2014.05.08
申请人 PANASONIC IP MANAGEMENT CORP 发明人 KITAGAWA DAI;OKUMURA TOMOHIRO
分类号 H01L21/324;H01L21/265;H05H1/30 主分类号 H01L21/324
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