NON-VOLATILE MEMORY USING BI-DIRECTIONAL RESISTIVE ELEMENTS

摘要

A memory cell includes a first bi-directional resistive element having a cathode coupled to a first power rail and an anode coupled to an internal node, a second bi-directional resistive element having a cathode coupled to the internal node and an anode coupled to a second power rail, and a first transistor having a control electrode coupled to the internal node, a first current electrode coupled to a first bitline, and a second current electrode coupled to a third power rail.

主权项

1. A memory cell comprising:
a first bi-directional resistive element having a cathode coupled to a first power rail and an anode coupled to an internal node; a second bi-directional resistive element having a cathode coupled to the internal node and an anode coupled to a second power rail; a first transistor having a control electrode coupled to the internal node, and a first current electrode coupled to a first bitline, and a second current electrode coupled to one of a group consisting of: a read wordline and a third power rail; a column decode and control circuit configured to apply a same voltage to the first and second power rails during a write operation while the internal node is at a different voltage than the same voltage.