| 发明名称 |
THIN-FILM TRANSISTOR SUBSTRATE |
| 摘要 |
An embodiment of the invention provides a thin-film transistor substrate, including: a substrate; a gate electrode disposed on the substrate; a gate insulating layer disposed on the substrate and covering the gate electrode; an active layer disposed on the gate insulating layer and above the gate electrode, wherein the active layer includes a metal oxide; a source electrode disposed on and electrically connecting to the active layer; a first insulating layer covering the source electrode; and a drain electrode disposed on and electrically connecting to the active layer, wherein the drain electrode includes a metal oxide layer. |
| 申请公布号 |
US2015349067(A1) |
申请公布日期 |
2015.12.03 |
| 申请号 |
US201514821158 |
申请日期 |
2015.08.07 |
| 申请人 |
InnoLux Corporation |
发明人 |
TSAI Chia-Hao;LIN Chih-Lung |
| 分类号 |
H01L29/417;H01L29/423;H01L27/12;H01L29/786 |
主分类号 |
H01L29/417 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A thin-film transistor substrate, comprising:
a substrate; a gate electrode disposed on the substrate; a gate insulating layer disposed on the substrate and covering the gate electrode; an active layer disposed on the gate insulating layer and above the gate electrode, wherein the active layer comprises a metal oxide; a source electrode disposed on and electrically connecting to the active layer; a first insulating layer covering the source electrode; and a drain electrode disposed on and electrically connecting to the active layer, wherein the drain electrode comprises a metal oxide layer. |
| 地址 |
Miao-Li County TW |
