| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
A semiconductor device is provided. The semiconductor device includes a semiconductor substrate, a P-well and an N-well disposed in the semiconductor substrate, a source disposed in the N-well and a drain disposed in the P-well, a shallow trench isolation (STI) structure disposed in the P-well, a gate structure disposed on the semiconductor substrate, wherein a portion of the gate structure extends into the semiconductor substrate and is disposed in a location corresponding to the STI structure. |
| 申请公布号 |
US2015349050(A1) |
申请公布日期 |
2015.12.03 |
| 申请号 |
US201414568819 |
申请日期 |
2014.12.12 |
| 申请人 |
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION |
发明人 |
FANG Lei |
| 分类号 |
H01L29/06;H01L21/265;H01L29/66;H01L21/762;H01L29/78;H01L29/423 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a semiconductor substrate; a P-well and an N-well disposed in the semiconductor substrate; a source disposed in the N-well and a drain disposed in the P-well; a shallow trench isolation (STI) structure disposed in the P-well; a gate structure disposed on the semiconductor substrate, wherein a portion of the gate structure extends into the semiconductor substrate and is disposed in a location corresponding to the STI structure. |
| 地址 |
SHANGHAI CN |
