| 发明名称 |
IMAGE SENSOR FOR X-RAY AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
Provided are an image sensor for an X-ray and a method of manufacturing the same, the image sensor for the X-ray, including: a semiconductor active layer formed on an insulating substrate; a gate insulating film on the semiconductor active layer; a gate electrode formed on the gate insulating film; an interlayer insulating film which is formed on the gate electrode and in which a first via hole is formed; a source electrode formed on the first via hole; a drain electrode formed on the first via hole; a first electrode formed to be connected to the source electrode or the drain electrode; and a photo diode formed on the first electrode. |
| 申请公布号 |
US2015349016(A1) |
申请公布日期 |
2015.12.03 |
| 申请号 |
US201314760858 |
申请日期 |
2013.09.30 |
| 申请人 |
SILICON DISPLAY TECHNOLOGY |
发明人 |
HAM Yong Ju;HUR Ji Ho;KIM Ki Joong;NAM Youn Duck;CHOI Soon Ho |
| 分类号 |
H01L27/146;H01L31/20;H01L29/66;H01L29/786;H01L29/24 |
主分类号 |
H01L27/146 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An image sensor for an X-ray, comprising:
a semiconductor active layer formed on an insulating substrate; a gate insulating film on the semiconductor active layer; a gate electrode formed on the gate insulating film; an interlayer insulating film which is formed on the gate electrode and in which a first via hole is formed; a source electrode formed on the first via hole; a drain electrode formed on the first via hole; a first electrode formed to be connected to the source electrode or the drain electrode; and a photo diode formed on the first electrode. |
| 地址 |
Yongin-si, Gyeonggi-do KR |
