METHOD FOR MANUFACTURING OXIDE THIN FILM TRANSISTOR (TFT) ARRAY SUBSTRATE

摘要

The present disclosure provides a method for manufacturing an oxide thin film transistor (TFT) array substrate. Specifically the step of forming the thin film transistors may include: forming a pattern of an oxide semiconductor layer on the substrate with photoresist is reserved on the channel regions in the pattern of the oxide semiconductor layer; and forming a source-drain metal layer on the pattern of the oxide semiconductor layer, forming patterns that include source electrodes and drain electrodes by an etching process, and removing the photoresist reserved on the channel regions in the pattern of the oxide semiconductor layer.

主权项

1. A method for manufacturing an oxide thin film transistor (TFT) array substrate, comprising a step of forming thin film transistors on a substrate, wherein the step of forming the thin film transistors comprises:
forming a pattern of an oxide semiconductor layer on the substrate, wherein photoresist is reserved on channel regions in the pattern of the oxide semiconductor layer; and forming a source-drain metal layer on the pattern of the oxide semiconductor layer, forming patterns that include source electrodes and drain electrodes by an etching process, and removing the photoresist reserved on the channel regions in the pattern of the oxide semiconductor layer.